PART |
Description |
Maker |
1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
HVC417C |
Diodes>Variable Capacitance Variable Capacitance Diode for tuner
|
RENESAS[Renesas Electronics Corporation]
|
HVU316 |
Diodes>Variable Capacitance Variable Capacitance Diode for BS/CS tuner
|
Renesas Electronics Corporation
|
HVU363B |
Diodes>Variable Capacitance Variable Capacitance Diode for TV tuner
|
Renesas Electronics Corporation
|
HVC362TRF-E HVC317BTRF HVU200ATRU HVC358BTRF-E |
15 V, SILICON, VARIABLE CAPACITANCE DIODE 30 V, SILICON, VARIABLE CAPACITANCE DIODE VHF BAND, 32 V, SILICON, VARIABLE CAPACITANCE DIODE
|
|
HVL355C |
6.82 pF, SILICON, VARIABLE CAPACITANCE DIODE Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
HVC383B |
20 pF, SILICON, VARIABLE CAPACITANCE DIODE Variable Capacitance Diode for VCO
|
RENESAS[Renesas Electronics Corporation]
|
BB512 Q62702-B479 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8 V) Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ?8 V) From old datasheet system Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ˇ 8 V) 470 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
1N5448A 1N5465A 1N5467B JAN1N5469B 1N5445C 1N5446C |
22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 20 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 27 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 18 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 33 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 100 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
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